IRF540NSTRLPBF

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INFINEON

POWER MOSFET, N CHANNEL, 100 V, 33 A, 0.044 OHM, TO-263 (D2PAK), SURFACE MOUNT

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IRF540NSTRLPBF

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INFINEON

POWER MOSFET, N CHANNEL, 100 V, 33 A, 0.044 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRF540 Series

The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

Technical Specifications

Parameters and characteristics for this part

Specification	IRF540NSTRLPBF

Current - Continuous Drain (Id) (Tc)	33 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	71 nC
Input Capacitance (Ciss) (Max)	1960 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	130 W
Rds On (Max)	44 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF540 Series

Part	Mounting Type	Technology	Vgs(th) (Max)	FET Type	Vgs (Max)	Package Name	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package / Case
INFINEON IRF540ZPBF	Through Hole	MOSFET (Metal Oxide)	4 V	N-Channel	20 V	TO-220AB	1770 pF	-55 °C	175 °C	10 V	26.5 mOhm	92 W	36 A	100 V	63 nC	TO-220-3
INFINEON IRF540ZLPBF	Through Hole	MOSFET (Metal Oxide)	4 V	N-Channel	20 V	TO-262	1770 pF	-55 °C	175 °C	10 V	26.5 mOhm	92 W	36 A	100 V	63 nC	I2PAK TO-262-3 Long Leads TO-262AA
INFINEON IRF540NLPBF	Through Hole	MOSFET (Metal Oxide)	4 V	N-Channel	20 V	TO-262	1960 pF	-55 °C	175 °C	10 V	44 mOhm	130 W	33 A	100 V	71 nC	I2PAK TO-262-3 Long Leads TO-262AA
INFINEON IRF540NSTRRPBF	Surface Mount	MOSFET (Metal Oxide)	4 V	N-Channel	20 V	D2PAK	1960 pF	-55 °C	175 °C	10 V	44 mOhm	130 W	33 A	100 V	71 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IRF540NSTRLPBF	Surface Mount	MOSFET (Metal Oxide)	4 V	N-Channel	20 V	D2PAK	1960 pF	-55 °C	175 °C	10 V	44 mOhm	130 W	33 A	100 V	71 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IRF540NPBF	Through Hole	MOSFET (Metal Oxide)	4 V	N-Channel	20 V	TO-220AB	1960 pF	-55 °C	175 °C	10 V	44 mOhm	130 W	33 A	100 V	71 nC	TO-220-3

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IRF540NSTRLPBF | Datasheet

IR Part Numbering System