SST25VF010A-33-4I-QAE-T
ActiveFLASH SERIAL-SPI 3.3V 1MBIT 128K X 8BIT 12NS 8-PIN WSON EP T/R
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SST25VF010A-33-4I-QAE-T
ActiveFLASH SERIAL-SPI 3.3V 1MBIT 128K X 8BIT 12NS 8-PIN WSON EP T/R
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | SST25VF010A-33-4I-QAE-T | SST25VF010A Series |
|---|---|---|
| Clock Frequency | 33 MHz | 33 MHz |
| Memory Format | FLASH | FLASH |
| Memory Interface | SPI | SPI |
| Memory Organization | 128K x 8 | 128K x 8 |
| Memory Size | 1 Mbit | 1 Mbit |
| Memory Type | Non-Volatile | Non-Volatile |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 85 °C | 70 - 85 °C |
| Operating Temperature [Min] | -40 °C | -40 - 0 °C |
| Package / Case | 8-WDFN Exposed Pad | 8-WDFN Exposed Pad, 8-SOIC |
| Package / Case | - | 3.9 mm |
| Package / Case | - | 0.154 in |
| Supplier Device Package | 8-WSON | 8-WSON, 8-SOIC |
| Technology | FLASH | FLASH |
| Voltage - Supply [Max] | 3.6 V | 3.6 V |
| Voltage - Supply [Min] | 2.7 V | 2.7 V |
| Write Cycle Time - Word, Page [custom] | 20 µs | 20 µs |
| Write Cycle Time - Word, Page [custom] | 20 µs | 20 µs |
SST25VF010A Series
1Mb 2.7-3.6V SPI Serial Flash
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Package / Case | Memory Size | Memory Organization | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Technology | Supplier Device Package | Mounting Type | Clock Frequency | Memory Format | Memory Interface | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology SST25VF010A-33-4C-QAE-T | 2.7 V | 3.6 V | 70 °C | 0 °C | Non-Volatile | 8-WDFN Exposed Pad | 1 Mbit | 128K x 8 | 20 µs | 20 µs | FLASH | 8-WSON | Surface Mount | 33 MHz | FLASH | SPI | ||
Microchip Technology SST25VF010A-33-4C-SAE | 2.7 V | 3.6 V | 70 °C | 0 °C | Non-Volatile | 8-SOIC | 1 Mbit | 128K x 8 | 20 µs | 20 µs | FLASH | 8-SOIC | Surface Mount | 33 MHz | FLASH | SPI | 3.9 mm | 0.154 in |
Microchip Technology SST25VF010A-33-4I-QAE-T | 2.7 V | 3.6 V | 85 °C | -40 °C | Non-Volatile | 8-WDFN Exposed Pad | 1 Mbit | 128K x 8 | 20 µs | 20 µs | FLASH | 8-WSON | Surface Mount | 33 MHz | FLASH | SPI | ||
Microchip Technology SST25VF010A-33-4C-QAE | 2.7 V | 3.6 V | 70 °C | 0 °C | Non-Volatile | 8-WDFN Exposed Pad | 1 Mbit | 128K x 8 | 20 µs | 20 µs | FLASH | 8-WSON | Surface Mount | 33 MHz | FLASH | SPI | ||
Microchip Technology SST25VF010A-33-4C-SAE-T | 2.7 V | 3.6 V | 70 °C | 0 °C | Non-Volatile | 8-SOIC | 1 Mbit | 128K x 8 | 20 µs | 20 µs | FLASH | 8-SOIC | Surface Mount | 33 MHz | FLASH | SPI | 3.9 mm | 0.154 in |
Microchip Technology SST25VF010A-33-4I-SAE | 2.7 V | 3.6 V | 85 °C | -40 °C | Non-Volatile | 8-SOIC | 1 Mbit | 128K x 8 | 20 µs | 20 µs | FLASH | 8-SOIC | Surface Mount | 33 MHz | FLASH | SPI | 3.9 mm | 0.154 in |
Microchip Technology SST25VF010A-33-4I-QAE | 2.7 V | 3.6 V | 85 °C | -40 °C | Non-Volatile | 8-WDFN Exposed Pad | 1 Mbit | 128K x 8 | 20 µs | 20 µs | FLASH | 8-WSON | Surface Mount | 33 MHz | FLASH | SPI |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.07 | |
| 25 | $ 1.04 | |||
| 100 | $ 1.00 | |||
| Digi-Reel® | 1 | $ 1.07 | ||
| 25 | $ 1.04 | |||
| 100 | $ 1.00 | |||
| Tape & Reel (TR) | 2000 | $ 0.97 | ||
| Microchip Direct | T/R | 1 | $ 1.04 | |
| 25 | $ 1.01 | |||
| 100 | $ 0.97 | |||
| 1000 | $ 0.90 | |||
| 5000 | $ 0.85 | |||
Description
General part information
SST25VF010A Series
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.