SST25VF010A Series

1Mb 2.7-3.6V SPI Serial Flash

Catalog

1Mb 2.7-3.6V SPI Serial Flash

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Memory Type	Package / Case	Memory Size	Memory Organization	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Technology	Supplier Device Package	Mounting Type	Clock Frequency	Memory Format	Memory Interface	Package / Case [y]	Package / Case [x]
Microchip Technology SST25VF010A-33-4C-QAE-T	2.7 V	3.6 V	70 °C	0 °C	Non-Volatile	8-WDFN Exposed Pad	1 Mbit	128K x 8	20 µs	20 µs	FLASH	8-WSON	Surface Mount	33 MHz	FLASH	SPI
Microchip Technology SST25VF010A-33-4C-SAE	2.7 V	3.6 V	70 °C	0 °C	Non-Volatile	8-SOIC	1 Mbit	128K x 8	20 µs	20 µs	FLASH	8-SOIC	Surface Mount	33 MHz	FLASH	SPI	3.9 mm	0.154 in
Microchip Technology SST25VF010A-33-4I-QAE-T	2.7 V	3.6 V	85 °C	-40 °C	Non-Volatile	8-WDFN Exposed Pad	1 Mbit	128K x 8	20 µs	20 µs	FLASH	8-WSON	Surface Mount	33 MHz	FLASH	SPI
Microchip Technology SST25VF010A-33-4C-QAE	2.7 V	3.6 V	70 °C	0 °C	Non-Volatile	8-WDFN Exposed Pad	1 Mbit	128K x 8	20 µs	20 µs	FLASH	8-WSON	Surface Mount	33 MHz	FLASH	SPI
Microchip Technology SST25VF010A-33-4C-SAE-T	2.7 V	3.6 V	70 °C	0 °C	Non-Volatile	8-SOIC	1 Mbit	128K x 8	20 µs	20 µs	FLASH	8-SOIC	Surface Mount	33 MHz	FLASH	SPI	3.9 mm	0.154 in
Microchip Technology SST25VF010A-33-4I-SAE	2.7 V	3.6 V	85 °C	-40 °C	Non-Volatile	8-SOIC	1 Mbit	128K x 8	20 µs	20 µs	FLASH	8-SOIC	Surface Mount	33 MHz	FLASH	SPI	3.9 mm	0.154 in
Microchip Technology SST25VF010A-33-4I-QAE	2.7 V	3.6 V	85 °C	-40 °C	Non-Volatile	8-WDFN Exposed Pad	1 Mbit	128K x 8	20 µs	20 µs	FLASH	8-WSON	Surface Mount	33 MHz	FLASH	SPI

Catalog

1Mb 2.7-3.6V SPI Serial Flash

Key Features

• * Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3

• * Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)

• * Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks

• * Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)

• * Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations

• * Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm)-- 8-bump XFBGA

• * All non-Pb (lead-free) devices are RoHS compliant

Description

SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.