
BSS84AKQBZ
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 50V 0.27A 3-PIN DFN-D T/R AUTOMOTIVE AEC-Q101

BSS84AKQBZ
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 50V 0.27A 3-PIN DFN-D T/R AUTOMOTIVE AEC-Q101
Description
General part information
BSS84AKQB Series
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSS84AKQBZ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 270 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 0.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 23.2 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 3-XDFN Exposed Pad |
| Package Name | DFN1110D-3 |
| Power Dissipation (Max) | 4.2 W, 420 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 7.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) Negative | -20 V |
| Vgs (Max) Positive | 12 V |
| Vgs(th) (Max) | 2.1 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Reflow soldering profile
小巧轻便的汽车 二极管和晶体管
Thermal performance of DFN packages
50 V, P-channel Trench MOSFET
Thermal performance of DFN packages
可湿性侧面
Side-Wettable Flanks enable AOI on Leadless SMD (DFN) packages
Small & light automotive diodes and transistors
plastic, leadless extremely thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.65 mm pitch; 1.1 mm x 1 mm x 0.48 mm body
DFN1110D-3; Reel pack for SMD, 7"; Q2/T3 product orientation
Automatic Optical Inspection of DFN Components
Low temperature soldering, application study
Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)