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50 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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50 V, P-channel Trench MOSFET
50 V, P-channel Trench MOSFET
| Part | Qualification | Gate Charge (Max) | Mounting Type | Grade | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Technology | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Package Name | Vgs(th) (Max) | Current - Continuous Drain (Id) (Ta) | Rds On (Max) | Vgs (Max) Positive | Vgs (Max) Negative | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | AEC-Q101 | 0.6 nC | Surface Mount Wettable Flank | Automotive | 50 V | 4.2 W 420 mW | -55 °C | 150 °C | MOSFET (Metal Oxide) | P-Channel | 10 V | 4.5 V | 23.2 pF | DFN1110D-3 | 2.1 V | 270 mA | 7.5 Ohm | 12 V | -20 V | 3-XDFN Exposed Pad |