IRF7380QTRPBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

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Obsolete

Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7380QTRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	80 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	660 pF
Mounting Type	Surface Mount
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	73 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Configuration	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRF7380QTRPBF	4 V	2 W	8-SOIC	3.9 mm	0.154 in	80 V	3.6 A	MOSFET (Metal Oxide)	Surface Mount	660 pF	Logic Level Gate	73 mOhm	23 nC	8-SO	2 N-Channel (Dual)
Infineon Technologies IRF7380PBF	4 V	2 W	8-SOIC	3.9 mm	0.154 in	80 V	3.6 A	MOSFET (Metal Oxide)	Surface Mount	660 pF	Logic Level Gate	73 mOhm	23 nC	8-SO	2 N-Channel (Dual)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$