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MOSFET 2N-CH 80V 3.6A 8-SOIC
| Part | Vgs(th) (Max) @ Id | Power - Max [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Configuration | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | 2 W | 8-SOIC | 3.9 mm | 0.154 in | 80 V | 3.6 A | MOSFET (Metal Oxide) | Surface Mount | 660 pF | Logic Level Gate | 73 mOhm | 23 nC | 8-SO | 2 N-Channel (Dual) | ||
Infineon Technologies | 4 V | 2 W | 8-SOIC | 3.9 mm | 0.154 in | 80 V | 3.6 A | MOSFET (Metal Oxide) | Surface Mount | 660 pF | Logic Level Gate | 73 mOhm | 23 nC | 8-SO | 2 N-Channel (Dual) | -55 °C | 150 °C |