IR2235JTRPBF

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THE IR2235J IS A 1200 V THREE-PHASE GATE DRIVER IC WITH OVER CURRENT PROTECTION, FAULT REPORTING ( 44 LEAD PLCC PACKAGE)

IR2235JTRPBF

Active

INFINEON

THE IR2235J IS A 1200 V THREE-PHASE GATE DRIVER IC WITH OVER CURRENT PROTECTION, FAULT REPORTING ( 44 LEAD PLCC PACKAGE)

Description Specifications Series Pricing CAD Documents

Description

General part information

IR2235 Series

EiceDRIVER™ 1200 Vthree phasegate driver ICwith typical 0.25 A source and 0.5 A sink currents in 44 Lead PLCC package forIGBTsandMOSFETs. Also available in 28 Lead PDIP and 28 Lead SOICWB.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2235JTRPBF

Channel Type	3-Phase
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	1.2 kV
Input Type	Inverting
Logic Voltage - VIH	2 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	6
Operating Temperature	125 °C
Package Leads	32 Leads
Package Length	16.58 mm
Package Name	44-LCC (J-Lead), 32 Leads
Package Width	16.58 mm
Rise Time (Typ)	90 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2235 Series

Part	Gate Type	Package Width	Package Name	Package Length	Gate Channel	Input Type	Driven Configuration	Logic Voltage - VIH	Logic Voltage - VIL	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Mounting Type	Rise Time (Typ)	Fall Time (Typ)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Channel Type	Operating Temperature	Package Leads	High Side Voltage - Max (Bootstrap)
INFINEON IR2235JTR	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 kV
INFINEON IR2235STRPBF	IGBT MOSFET N-Channel MOSFET	7.5 mm	28-SOIC	0.295 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235J	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 kV
INFINEON IR2235JTRPBF	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 kV
INFINEON IR2235PBF	IGBT MOSFET	15.24 mm	28-DIP	0.6 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Through Hole	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235SPBF	IGBT MOSFET N-Channel MOSFET	7.5 mm	28-SOIC	0.295 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235S	IGBT MOSFET N-Channel MOSFET	7.5 mm	28-SOIC	0.295 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235JPBF	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 V
INFINEON IR2235PBF	IGBT MOSFET N-Channel MOSFET	15.24 mm	28-DIP 28-PDIP	0.6 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Through Hole	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235JPBF	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 kV

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Gate driver IC MOSFET - EiceDRIVER™ and CoolMOS™ CFD2 Join for High Efficiency in Refrigeration - Bodos Power

Application Note AN-978 HV Floating MOS-Gate Driver ICs

Technical Data Sheet EN