IR2235STRPBF

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EICEDRIVER™ 1200 V THREE PHASE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 28W PACKAGE AND WORKS WITH IGBTS. FEATURES: ENABLE, FAULT REPORTING, OPERATIONAL AMPLIFIER, OVER-CURRENT PROTECTION (ITRIP), SEPARATE PIN FOR LOGIC GROUND, SHOOT THROUGH PROTECTION, SHUTDOWN

IR2235STRPBF

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INFINEON

Description Specifications Series Pricing CAD Documents

Description

General part information

IR2235 Series

1200 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 28 Lead SOICWB package for IGBTs and MOSFETs. Also available in 28 Lead PDIP and 44 Lead PLCC.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2235STRPBF

Channel Type	3-Phase
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	1.2 kV
Input Type	Inverting
Logic Voltage - VIH	2 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	6
Operating Temperature	125 °C
Package Length	0.295 in
Package Name	28-SOIC
Package Width	7.5 mm
Rise Time (Typ)	90 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2235 Series

Part	Gate Type	Package Width	Package Name	Package Length	Gate Channel	Input Type	Driven Configuration	Logic Voltage - VIH	Logic Voltage - VIL	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Mounting Type	Rise Time (Typ)	Fall Time (Typ)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Channel Type	Operating Temperature	Package Leads	High Side Voltage - Max (Bootstrap)
INFINEON IR2235JTR	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 kV
INFINEON IR2235STRPBF	IGBT MOSFET N-Channel MOSFET	7.5 mm	28-SOIC	0.295 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235J	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 kV
INFINEON IR2235JTRPBF	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 kV
INFINEON IR2235PBF	IGBT MOSFET	15.24 mm	28-DIP	0.6 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Through Hole	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235SPBF	IGBT MOSFET N-Channel MOSFET	7.5 mm	28-SOIC	0.295 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235S	IGBT MOSFET N-Channel MOSFET	7.5 mm	28-SOIC	0.295 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235JPBF	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 V
INFINEON IR2235PBF	IGBT MOSFET N-Channel MOSFET	15.24 mm	28-DIP 28-PDIP	0.6 in	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Through Hole	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C		1.2 kV
INFINEON IR2235JPBF	IGBT MOSFET N-Channel MOSFET	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	N-Channel	Inverting	Half-Bridge	2 V	0.8 V	6	500 mA	250 mA	Surface Mount	90 ns	40 ns	10 VDC	20 V	3-Phase	125 °C	32 Leads	1.2 kV

Pricing

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