SPU04N60S5BKMA1

Obsolete

Infineon Technologies

MOSFET N-CH 600V 4.5A TO251-3

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Obsolete

Infineon Technologies

MOSFET N-CH 600V 4.5A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPU04N60S5BKMA1

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22.9 nC
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	950 mOhm
Supplier Device Package	PG-TO251-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies SPU04N60S5BKMA1	MOSFET (Metal Oxide)	50 W	22.9 nC	950 mOhm	-55 °C	150 °C	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	4.5 A	600 V	N-Channel	10 V	20 V	PG-TO251-3-21	580 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO251-3-21

Technical documentation and resources