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MOSFET N-CH 600V 4.5A TO251-3
| Part | Technology | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 50 W | 22.9 nC | 950 mOhm | -55 °C | 150 °C | Through Hole | IPAK TO-251-3 Short Leads TO-251AA | 4.5 A | 600 V | N-Channel | 10 V | 20 V | PG-TO251-3-21 | 580 pF |