Specification	HN1B04FE-Y,LF

Current - Collector (Ic) (Max)	0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	120
Frequency - Transition	80 MHz
Mounting Type	Surface Mount
NPN Count	1
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Package Name	ES6
PNP Count	1
Power - Max	100 mW
Transistor Type	PNP, NPN
Vce Saturation (Max)	250 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

HN1B04FE Series

Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-563(ES6)

Part	Frequency - Transition	DC Current Gain (hFE) (Min)	Package / Case	Current - Collector (Ic) (Max)	Power - Max	Vce Saturation (Max)	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max)	PNP Count	Transistor Type	NPN Count	Operating Temperature	Package Name	Grade	Qualification
Toshiba Semiconductor and Storage HN1B04FE-GR,LF	80 MHz	200	SOT-563 SOT-666	0.15 mA	100 mW	250 mV	Surface Mount	50 V	100 nA	1	NPN PNP	1	150 °C	ES6
Toshiba Semiconductor and Storage HN1B04FE-Y,LF	80 MHz	120	SOT-563 SOT-666	0.15 mA	100 mW	250 mV	Surface Mount	50 V	100 nA	1	NPN PNP	1	150 °C	ES6
Toshiba Semiconductor and Storage HN1B04FE-GR,LXHF	80 MHz	200	SOT-563 SOT-666	0.15 mA	100 mW	250 mV 300 mV	Surface Mount	50 V	100 nA	1	NPN PNP	1	150 °C	ES6	Automotive	AEC-Q101
Toshiba Semiconductor and Storage HN1B04FE-Y,LXHF	80 MHz	120	SOT-563 SOT-666	0.15 mA	100 mW	250 mV 300 mV	Surface Mount	50 V	100 nA	1	NPN PNP	1	150 °C	ES6	Automotive	AEC-Q101