Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-563(ES6)
Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-563(ES6)
Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-563(ES6)
| Part | Frequency - Transition | DC Current Gain (hFE) (Min) | Package / Case | Current - Collector (Ic) (Max) | Power - Max | Vce Saturation (Max) | Mounting Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | PNP Count | Transistor Type | NPN Count | Operating Temperature | Package Name | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 80 MHz | 200 | SOT-563 SOT-666 | 0.15 mA | 100 mW | 250 mV | Surface Mount | 50 V | 100 nA | 1 | NPN PNP | 1 | 150 °C | ES6 | ||
 Toshiba Semiconductor and Storage | 80 MHz | 120 | SOT-563 SOT-666 | 0.15 mA | 100 mW | 250 mV | Surface Mount | 50 V | 100 nA | 1 | NPN PNP | 1 | 150 °C | ES6 | ||
Toshiba Semiconductor and Storage | 80 MHz | 200 | SOT-563 SOT-666 | 0.15 mA | 100 mW | 250 mV 300 mV | Surface Mount | 50 V | 100 nA | 1 | NPN PNP | 1 | 150 °C | ES6 | Automotive | AEC-Q101 |
Toshiba Semiconductor and Storage | 80 MHz | 120 | SOT-563 SOT-666 | 0.15 mA | 100 mW | 250 mV 300 mV | Surface Mount | 50 V | 100 nA | 1 | NPN PNP | 1 | 150 °C | ES6 | Automotive | AEC-Q101 |