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STW57N65M5-4

STW57N65M5-4

Obsolete
STMicroelectronics

MOSFETS N-CHANEL 650 V 0.056 OHM TYP 42 A

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STW57N65M5-4

STW57N65M5-4

Obsolete
STMicroelectronics

MOSFETS N-CHANEL 650 V 0.056 OHM TYP 42 A

Find alt

Description

General part information

Mdmesh M5 Series

These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW57N65M5-4
Current - Continuous Drain (Id) (Tc)42 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)98 nC
Input Capacitance (Ciss) (Max)4200 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-4
Package NameTO-247-4L
Power Dissipation (Max)250 W
Rds On (Max)63 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)5 V

Pricing

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CAD

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Documents

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