STF15N60M2-EP

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STMicroelectronics

MOSFET N-CH 600V 11A TO220FP

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STF15N60M2-EP

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STMicroelectronics

MOSFET N-CH 600V 11A TO220FP

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF15N60M2-EP

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	590 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	378 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STF15NM65N Series

N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP package

Part	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature
STMicroelectronics STF15N60M2-EP	N-Channel	600 V	10 V	4 V	-55 °C	150 °C	TO-220FP	11 A	Through Hole	590 pF	25 W	378 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	25 V	17 nC
STMicroelectronics STF15NM65N	N-Channel	650 V	10 V	4 V	-55 °C	150 °C	TO-220FP	12 A	Through Hole	983 pF		380 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	25 V		33.3 nC
STMicroelectronics STF15N65M5	N-Channel	650 V	10 V	5 V			TO-220FP	11 A	Through Hole	816 pF		340 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	25 V		22 nC	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.28
		50	$ 1.03
		100	$ 0.85
		500	$ 0.77

Description

General part information

STF15NM65N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFETs associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources