STF15NM65N Series

N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP package

Catalog

N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP package

Part	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature
STMicroelectronics STF15N60M2-EP	N-Channel	600 V	10 V	4 V	-55 °C	150 °C	TO-220FP	11 A	Through Hole	590 pF	25 W	378 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	25 V	17 nC
STMicroelectronics STF15NM65N	N-Channel	650 V	10 V	4 V	-55 °C	150 °C	TO-220FP	12 A	Through Hole	983 pF		380 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	25 V		33.3 nC
STMicroelectronics STF15N65M5	N-Channel	650 V	10 V	5 V			TO-220FP	11 A	Through Hole	816 pF		340 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	25 V		22 nC	150 °C

Catalog

N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP package

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFETs associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.