
VS-ETH3007THN3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 650V 30A TO220AC

VS-ETH3007THN3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 650V 30A TO220AC
Description
General part information
ETH3007 Series
Diode 650 V 30A Through Hole TO-220AC
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-ETH3007THN3 |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage | 30 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220AC |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 37 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 2.1 V |
Pricing
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CAD
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Documents
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