ETH3007 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 650V 30A TO220AC
| Part | Current - Reverse Leakage | Mounting Type | Current - Average Rectified (Io) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Reverse Recovery Time (trr) | Package Name | Voltage - Forward (Vf) (Max) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - DC Reverse (Vr) (Max) | Package / Case | Technology | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 µA | Through Hole | 30 A | 500 ns | 200 mA | 37 ns | TO-220AC | 2.1 V | 175 °C | -55 °C | 650 V | TO-220-2 | Standard | ||
Vishay General Semiconductor - Diodes Division | 30 µA | Through Hole | 30 A | 500 ns | 200 mA | 37 ns | TO-220AC | 2.1 V | 175 °C | -55 °C | 650 V | TO-220-2 | Standard | AEC-Q101 | Automotive |