IRF7351TRPBF

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Infineon Technologies

IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 17.8 MOHM;

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Infineon Technologies

IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 17.8 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7351TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	1330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	17.8 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	FET Feature	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power - Max [Max]	Technology	Rds On (Max) @ Id, Vgs	Mounting Type
Infineon Technologies IRF7351TRPBF	2 N-Channel (Dual)	-55 °C	150 °C	60 V	1330 pF	8-SO	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	8 A	4 V	2 W	MOSFET (Metal Oxide)	17.8 mOhm	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 8A 2W Surface Mount 8-SO

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