Beta
⌘K
IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 17.8 MOHM;
| Part | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power - Max [Max] | Technology | Rds On (Max) @ Id, Vgs | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 N-Channel (Dual) | -55 °C | 150 °C | 60 V | 1330 pF | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 8 A | 4 V | 2 W | MOSFET (Metal Oxide) | 17.8 mOhm | Surface Mount |