TSM2538CQ RFG

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Taiwan Semiconductor Corporation

MOSFET N/P-CH 20V 5.5A 6DFN

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Taiwan Semiconductor Corporation

MOSFET N/P-CH 20V 5.5A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2538CQ RFG

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	5.5 A, 10 A, 4.4 A, 8 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	9.4 nC
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	534 pF, 909 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power - Max	5 W, 1.89 W
Rds On (Max) @ Id, Vgs	40 mOhm, 70 mOhm
Supplier Device Package	6-DFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	800 mV

Part	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Package / Case	Power - Max	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Taiwan Semiconductor Corporation TSM2538CQ RFG	N and P-Channel	-55 °C	150 °C	9.4 nC	7.5 nC	MOSFET (Metal Oxide)	20 V	4.4 A 5.5 A 8 A 10 A	534 pF 909 pF	6-DFN (2x2)	Surface Mount	6-VDFN Exposed Pad	1.89 W 5 W	800 mV	40 mOhm 70 mOhm

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General part information

Mosfet Array 20V 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc) 1.89W (Ta), 5W (Tc) Surface Mount 6-DFN (2x2)

Technical documentation and resources

No documents available