Beta
⌘K
MOSFET N/P-CH 20V 5.5A 6DFN
| Part | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Mounting Type | Package / Case | Power - Max | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | N and P-Channel | -55 °C | 150 °C | 9.4 nC | 7.5 nC | MOSFET (Metal Oxide) | 20 V | 4.4 A 5.5 A 8 A 10 A | 534 pF 909 pF | 6-DFN (2x2) | Surface Mount | 6-VDFN Exposed Pad | 1.89 W 5 W | 800 mV | 40 mOhm 70 mOhm |