BSC047N08NS3GATMA1
ActivePOWER MOSFET, N CHANNEL, 80 V, 100 A, 0.0039 OHM, PG-TSDSON, SURFACE MOUNT
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BSC047N08NS3GATMA1
ActivePOWER MOSFET, N CHANNEL, 80 V, 100 A, 0.0039 OHM, PG-TSDSON, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSC047N08NS3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A, 18 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 69 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.5 W, 125 W |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm |
| Supplier Device Package | PG-TDSON-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
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Description
General part information
BSC047 Series
The BSC047N08NS3 G is a 80V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Documents
Technical documentation and resources