POWER MOSFET, N CHANNEL, 80 V, 100 A, 0.0039 OHM, PG-TSDSON, SURFACE MOUNT
| Part | Vgs (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | N-Channel | 69 nC | 2.5 W 125 W | 18 A 100 A | PG-TDSON-8-1 | 8-PowerTDFN | 3.5 V | 6 V 10 V | 4.7 mOhm | 80 V | 4800 pF |