Description
General part information
IPB025 Series
The IPB025N08N3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB025N08N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 120 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 206 nC |
| Input Capacitance (Ciss) (Max) | 14200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) | 2.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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