Specification	IPB025N10N3GE8187ATMA1

Current - Continuous Drain (Id) (Tc)	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	206 nC
Input Capacitance (Ciss) (Max)	14800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	6 Leads
Package Name	PG-TO263-7, TO-263-7, D2PAK
Power Dissipation (Max)	300 W
Rds On (Max)	2.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPB025 Series

Part	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Package Name	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package Leads	Vgs (Max)	Vgs(th) (Max)	Technology	Gate Charge (Max)	Package / Case
INFINEON IPB025N10N3GE8187ATMA1	2.5 mOhm	180 A	300 W	D2PAK PG-TO263-7 TO-263-7	14800 pF	6 V	10 V	N-Channel	-55 °C	175 °C	Surface Mount	100 V	6 Leads	20 V	3.5 V	MOSFET (Metal Oxide)	206 nC
INFINEON IPB025N10N3GATMA1	2.5 mOhm	180 A	300 W	D2PAK PG-TO263-7 TO-263-7	14800 pF	6 V	10 V	N-Channel	-55 °C	175 °C	Surface Mount	100 V	6 Leads	20 V	3.5 V	MOSFET (Metal Oxide)	206 nC
INFINEON IPB025N08N3GATMA1	2.5 mOhm	120 A	300 W	PG-TO263-3	14200 pF	6 V	10 V	N-Channel	-55 °C	175 °C	Surface Mount	80 V		20 V	3.5 V	MOSFET (Metal Oxide)	206 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

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