SSM3J334R,LF

Active

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 4A SOT23F

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 4A SOT23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J334R,LF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.9 nC
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	71 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Supplier Device Package
Toshiba Semiconductor and Storage SSM3J334R,LF	20 V	Surface Mount	280 pF	2 V	30 V	71 mOhm	P-Channel	4 A	150 °C	MOSFET (Metal Oxide)	SOT-23-3 Flat Leads	4 V	10 V	5.9 nC	1 W	SOT-23F

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 4A (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources