MOSFET P-CH 30V 4A SOT23F
| Part | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | Surface Mount | 280 pF | 2 V | 30 V | 71 mOhm | P-Channel | 4 A | 150 °C | MOSFET (Metal Oxide) | SOT-23-3 Flat Leads | 4 V | 10 V | 5.9 nC | 1 W | SOT-23F |