IPP034N08N5AKSA1
UnknownOPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 3.4 MOHM;
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IPP034N08N5AKSA1
UnknownOPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 3.4 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP034N08N5AKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 87 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6240 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 167 W |
| Rds On (Max) @ Id, Vgs [Max] | 3.4 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPP034 Series
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification fortelecomandserver power supplies. In addition, the device can also be utilized in other industrial applications such assolar,low voltage drivesandadapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on)reduction of up to 43%.
Documents
Technical documentation and resources