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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 3.4 MOHM;
| Part | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Mounting Type | Technology | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Rds On (Max) @ Id, Vgs [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | TO-220-3 | 87 nC | 120 A | PG-TO220-3 | Through Hole | MOSFET (Metal Oxide) | 167 W | -55 °C | 175 ░C | 6240 pF | 6 V 10 V | 80 V | 3.8 V | N-Channel | 3.4 mOhm | ||
Infineon Technologies | 20 V | TO-220-3 | 51 nC | PG-TO220-3-1 | Through Hole | MOSFET (Metal Oxide) | 94 W | -55 °C | 175 ░C | 5300 pF | 4.5 V 10 V | 30 V | N-Channel | 3.4 mOhm | 2.2 V |