SSM3J143TU,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5.5A UFM

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5.5A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J143TU,LF

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.8 nC
Input Capacitance (Ciss) (Max) @ Vds	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	29.8 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Technology	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM3J143TU,LF	12.8 nC	Surface Mount	1.5 V 4.5 V	840 pF	150 °C	MOSFET (Metal Oxide)	P-Channel	UFM	29.8 mOhm	6 V	-8 V	5.5 A	20 V	500 mW	1 V

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General part information

P-Channel 20 V 5.5A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources