Specification	SSM3J143TU,LF

Current - Continuous Drain (Id) (Ta)	5.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	12.8 nC
Input Capacitance (Ciss) (Max)	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-SMD, Flat Leads
Package Name	UFM
Power Dissipation (Max)	500 mW
Rds On (Max)	29.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	6 V
Vgs(th) (Max)	1 V

SSM3J143TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SOT-323F(UFM)

Part	Technology	FET Type	Rds On (Max)	Mounting Type	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max) Positive	Vgs (Max) Negative	Package / Case	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs(th) (Max)	Package Name	Input Capacitance (Ciss) (Max)	Operating Temperature	Grade	Qualification
Toshiba Semiconductor and Storage SSM3J143TU,LF	MOSFET (Metal Oxide)	P-Channel	29.8 mOhm	Surface Mount	500 mW	4.5 V	1.5 V	6 V	-8 V	3-SMD Flat Leads	5.5 A	20 V	12.8 nC	1 V	UFM	840 pF	150 °C
Toshiba Semiconductor and Storage SSM3J143TU,LXHF	MOSFET (Metal Oxide)	P-Channel	29.8 mOhm	Surface Mount	500 mW	4.5 V	1.5 V	6 V	-8 V	3-SMD Flat Leads	5.5 A	20 V	12.8 nC	1 V	UFM	840 pF	150 °C	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources