Beta
⌘K
MOSFET P-CH 20V 5.5A UFM
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Technology | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Vgs (Max) [Min] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 12.8 nC | Surface Mount | 1.5 V 4.5 V | 840 pF | 150 °C | MOSFET (Metal Oxide) | P-Channel | UFM | 29.8 mOhm | 6 V | -8 V | 5.5 A | 20 V | 500 mW | 1 V |