SSM6L56FE,LM

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L56FE,LM

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs	1 nC
Input Capacitance (Ciss) (Max) @ Vds	100 pF, 55 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	150 mW
Rds On (Max) @ Id, Vgs	235 mOhm, 390 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Mounting Type	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power - Max [Max]	Configuration	FET Feature	FET Feature
Toshiba Semiconductor and Storage SSM6L56FE,LM	55 pF 100 pF	SOT-563 SOT-666	MOSFET (Metal Oxide)	Surface Mount	150 °C	20 V	1 nC	235 mOhm 390 mOhm	ES6	800 mA	1 V	150 mW	N and P-Channel	Logic Level Gate	1.5 V

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General part information

Mosfet Array 20V 800mA (Ta) 150mW (Ta) Surface Mount ES6

Technical documentation and resources