SSM6L56 Series

Catalog

MOSFET N/P-CH 20V 0.8A ES6

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Mounting Type	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power - Max [Max]	Configuration	FET Feature	FET Feature
Toshiba Semiconductor and Storage SSM6L56FE,LM	55 pF 100 pF	SOT-563 SOT-666	MOSFET (Metal Oxide)	Surface Mount	150 °C	20 V	1 nC	235 mOhm 390 mOhm	ES6	800 mA	1 V	150 mW	N and P-Channel	Logic Level Gate	1.5 V