ZVP4424A

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Technical Specifications

Parameters and characteristics for this part

Specification	ZVP4424A

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	240 V
Drive Voltage (Max Rds On, Min Rds On)	3.5 V, 10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs	9 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	40 V
Vgs(th) (Max) @ Id	2 V

P-Channel Enhancement Mode Vertical DMOS FET

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
Diodes Inc ZVP4424A	MOSFET (Metal Oxide)	200 mA	750 mW	TO-226-3 TO-92-3	-55 °C	150 °C	9 Ohm	Through Hole	2 V	P-Channel	240 V	TO-92	200 pF	3.5 V 10 V	40 V
Diodes Inc ZVP4424ASTZ	MOSFET (Metal Oxide)	200 mA	750 mW	E-Line-3	-55 °C	150 °C	9 Ohm	Through Hole	2 V	P-Channel	240 V	E-Line (TO-92 compatible)	200 pF	3.5 V 10 V	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel Enhancement Mode Vertical DMOS FET

Technical documentation and resources