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P-Channel Enhancement Mode Vertical DMOS FET
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P-Channel Enhancement Mode Vertical DMOS FET
P-Channel Enhancement Mode Vertical DMOS FET
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs(th) (Max) @ Id | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 200 mA | 750 mW | TO-226-3 TO-92-3 | -55 °C | 150 °C | 9 Ohm | Through Hole | 2 V | P-Channel | 240 V | TO-92 | 200 pF | 3.5 V 10 V | 40 V |
Diodes Inc | MOSFET (Metal Oxide) | 200 mA | 750 mW | E-Line-3 | -55 °C | 150 °C | 9 Ohm | Through Hole | 2 V | P-Channel | 240 V | E-Line (TO-92 compatible) | 200 pF | 3.5 V 10 V | 40 V |