TK12J60W,S1VE(S

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11.5A TO3P

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11.5A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	TK12J60W,S1VE(S

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	890 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Power Dissipation (Max) [Max]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage TK12J60W,S1VE(S	110 W	N-Channel	300 mOhm	3.7 V	MOSFET (Metal Oxide)	150 °C	25 nC	890 pF	SC-65-3 TO-3P-3	11.5 A	600 V	30 V	TO-3P(N)	Through Hole	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 11.5A (Ta) 110W (Tc) Through Hole TO-3P(N)

Technical documentation and resources

No documents available