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MOSFET N-CH 600V 11.5A TO3P
| Part | Power Dissipation (Max) [Max] | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 110 W | N-Channel | 300 mOhm | 3.7 V | MOSFET (Metal Oxide) | 150 °C | 25 nC | 890 pF | SC-65-3 TO-3P-3 | 11.5 A | 600 V | 30 V | TO-3P(N) | Through Hole | 10 V |