SSM3J351R,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 3.5A SOT-23F

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 3.5A SOT-23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J351R,LF

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.1 nC
Input Capacitance (Ciss) (Max) @ Vds	660 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	134 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage SSM3J351R,LF	150 °C	-20 V	10 V	60 V	660 pF	Surface Mount	4 V	10 V	SOT-23F	15.1 nC	MOSFET (Metal Oxide)	SOT-23-3 Flat Leads	2 V	P-Channel	134 mOhm	2 W	3.5 A

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General part information

P-Channel 60 V 3.5A (Ta) 2W (Ta) Surface Mount SOT-23F

Technical documentation and resources

No documents available