MOSFET P-CH 60V 3.5A SOT-23F
| Part | Operating Temperature | Vgs (Max) [Min] | Vgs (Max) [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Technology | Package / Case | Vgs(th) (Max) @ Id | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | -20 V | 10 V | 60 V | 660 pF | Surface Mount | 4 V | 10 V | SOT-23F | 15.1 nC | MOSFET (Metal Oxide) | SOT-23-3 Flat Leads | 2 V | P-Channel | 134 mOhm | 2 W | 3.5 A |