IPD65R400CEAUMA1

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Infineon Technologies

MOSFET, N-CH, 650V, 15.1A, TO-252

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Infineon Technologies

MOSFET, N-CH, 650V, 15.1A, TO-252

Technical Specifications

Parameters and characteristics for this part

Specification	IPD65R400CEAUMA1

Current - Continuous Drain (Id) @ 25°C	15.1 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	118 W
Rds On (Max) @ Id, Vgs	400 mΩ
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case
Infineon Technologies IPD65R400CEAUMA1	15.1 A	710 pF	20 V	PG-TO252-3	-55 °C	150 °C	400 mΩ	650 V	118 W	MOSFET (Metal Oxide)	Surface Mount	3.5 V	39 nC	10 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 15.1A (Tc) 118W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources