Beta
⌘K
MOSFET, N-CH, 650V, 15.1A, TO-252
| Part | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 15.1 A | 710 pF | 20 V | PG-TO252-3 | -55 °C | 150 °C | 400 mΩ | 650 V | 118 W | MOSFET (Metal Oxide) | Surface Mount | 3.5 V | 39 nC | 10 V | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 |