IQE008N03LM5CGATMA1

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Infineon Technologies

IQE008N03LM5CG OPTIMOS™ LOW-VOLTAGE POWER MOSFET 30 V IN PQFN 3.3X3.3 SOURCE-DOWN PACKAGE

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DocumentsTechnical Data Sheet EN Datasheet

IQE008N03LM5CGATMA1

Active

Infineon Technologies

IQE008N03LM5CG OPTIMOS™ LOW-VOLTAGE POWER MOSFET 30 V IN PQFN 3.3X3.3 SOURCE-DOWN PACKAGE

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IQE008N03LM5CGATMA1

Current - Continuous Drain (Id) @ 25°C	27 A, 253 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	5700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	89 W, 2.1 W
Rds On (Max) @ Id, Vgs	0.85 mOhm
Supplier Device Package	PG-TTFN-9-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

IQE008N Series

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology
Infineon Technologies IQE008N03LM5CGATMA1	16 V	30 V	2.1 W 89 W	5700 pF	N-Channel	27 A 253 A	Surface Mount	64 nC	-55 °C	150 °C	4.5 V 10 V	8-PowerTDFN	PG-TTFN-9-1	0.85 mOhm	2 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.70
		10	$ 1.82
		100	$ 1.25
		500	$ 1.03
	Digi-Reel®	1	$ 2.70
		10	$ 1.82
		100	$ 1.25
		500	$ 1.03
	Tape & Reel (TR)	5000	$ 0.86
Newark	Each (Supplied on Cut Tape)	1	$ 2.76
		10	$ 1.85
		25	$ 1.66
		50	$ 1.47
		100	$ 1.28
		250	$ 1.27
		500	$ 1.02
		1000	$ 0.99

Description

General part information

IQE008N Series

The IQE008N03LM5CG is Infineon’s extension of the innovativeSource-Downtechnology. TheOptiMOSTM5 30VPQFN 3.3x3.3 Source-Down features 30 V and low RDS(on)of 0.85 mOhm. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on)and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management. The Source-Down portfolio is addressing applications, such asDrives,Telecom,SMPSorServer. The new technology can be found in two different footprints for now:Source-DownStandard-Gate andSource-DownCenter-Gate (optimized for parallelization).

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet