IQE008N Series

Catalog

IQE008N03LM5CG OPTIMOS™ LOW-VOLTAGE POWER MOSFET 30 V IN PQFN 3.3X3.3 SOURCE-DOWN PACKAGE

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology
Infineon Technologies IQE008N03LM5CGATMA1	16 V	30 V	2.1 W 89 W	5700 pF	N-Channel	27 A 253 A	Surface Mount	64 nC	-55 °C	150 °C	4.5 V 10 V	8-PowerTDFN	PG-TTFN-9-1	0.85 mOhm	2 V	MOSFET (Metal Oxide)