CSD13202Q2T

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Texas Instruments

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Texas Instruments

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Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	CSD13202Q2T	CSD13202 Series

Current - Continuous Drain (Id) @ 25°C	-	22 A
Drain to Source Voltage (Vdss)	12 V	12 V
Drive Voltage (Max Rds On, Min Rds On)	2.5 V, 4.5 V	2.5 - 4.5 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	997 pF	997 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Power Dissipation (Max) [Max]	2.7 W	2.7 W
Rds On (Max) @ Id, Vgs	9.3 mOhm	9.3 mOhm
Supplier Device Package	6-WSON (2x2)	6-WSON (2x2)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	8 V	8 V
Vgs(th) (Max) @ Id	1.1 V	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

PROTOTYPE

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD13202Q2T	MOSFET (Metal Oxide)	997 pF	12 V	1.1 V	2.7 W	9.3 mOhm	2.5 V, 4.5 V	8 V	Surface Mount	N-Channel	6.6 nC	150 °C	-55 °C	6-WSON (2x2)
Texas Instruments CSD13202Q2	MOSFET (Metal Oxide)	997 pF	12 V	1.1 V	2.7 W	9.3 mOhm	2.5 V, 4.5 V	8 V	Surface Mount	N-Channel	6.6 nC	150 °C	-55 °C	6-WSON (2x2)	22 A

General part information

N-Channel 12 V 14.4A (Ta) 2.7W (Ta) Surface Mount 6-WSON (2x2)

Technical documentation and resources