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BSO130P03SHXUMA1 - INFINEON BSO130P03SHXUMA1

BSO130P03SHXUMA1

Obsolete
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; SO-8 PACKAGE; 11 MOHM;

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Search across all available documentation for this part.

BSO130P03SHXUMA1 - INFINEON BSO130P03SHXUMA1

BSO130P03SHXUMA1

Obsolete
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; SO-8 PACKAGE; 11 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSO130P03SHXUMA1
Current - Continuous Drain (Id) @ 25°C9.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs81 nC
Input Capacitance (Ciss) (Max) @ Vds3520 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)1.56 W
Rds On (Max) @ Id, Vgs13 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
NewarkEach (Supplied on Cut Tape) 1$ 2.21

Description

General part information

BSO130 Series

These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Documents

Technical documentation and resources