Beta
⌘K
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; SO-8 PACKAGE; 11 MOHM;
| Part | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 9.2 A | MOSFET (Metal Oxide) | 10 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | -55 °C | 150 °C | P-Channel | 81 nC | 13 mOhm | 3520 pF | 30 V | 25 V | 1.56 W | 2.2 V |