Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC10065GY-TR | STPSC10065 Series |
|---|---|---|
| Capacitance @ Vr, F | 670 pF | 670 pF |
| Current - Average Rectified (Io) | 10 A | 10 A |
| Current - Reverse Leakage @ Vr | 130 µA | 130 µA |
| Grade | Automotive | Automotive |
| Mounting Type | Surface Mount | Surface Mount, Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3, TO-220-2 |
| Qualification | AEC-Q101 | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Speed | No Recovery Time | No Recovery Time |
| Supplier Device Package | D2PAK | D2PAK, TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V | 1.45 V |
STPSC10065 Series
650 V power Schottky silicon carbide diode
| Part | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Package / Case | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Technology | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC10065G2-TR | 1.45 V | 650 V | Surface Mount | No Recovery Time | D2PAK | -40 °C | 175 ░C | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 670 pF | 0 ns | 130 µA | 10 A | SiC (Silicon Carbide) Schottky | ||
STMicroelectronics STPSC10065DY | 1.45 V | 650 V | Through Hole | No Recovery Time | TO-220AC | -40 °C | 175 ░C | TO-220-2 | 670 pF | 0 ns | 130 µA | 10 A | SiC (Silicon Carbide) Schottky | Automotive | AEC-Q101 |
STMicroelectronics STPSC10065GY-TR | 1.45 V | 650 V | Surface Mount | No Recovery Time | D2PAK | -40 °C | 175 ░C | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 670 pF | 0 ns | 130 µA | 10 A | SiC (Silicon Carbide) Schottky | Automotive | AEC-Q101 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC10065 Series
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.