STPSC10065GY-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 34 NC, TO-263 (D2PAK)

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STPSC10065GY-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 34 NC, TO-263 (D2PAK)

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Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.26
		10	$ 2.74
		100	$ 2.21
		500	$ 1.97
	Digi-Reel®	1	$ 3.26
		10	$ 2.74
		100	$ 2.21
		500	$ 1.97
	Tape & Reel (TR)	1000	$ 1.52
Newark	Each (Supplied on Cut Tape)	1	$ 4.80
		10	$ 3.55
		25	$ 3.33
		50	$ 3.11
		100	$ 2.89
		250	$ 2.71
		500	$ 2.53
		1000	$ 2.41

Description

General part information

STPSC10065 Series

This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

Documents

Technical documentation and resources

Specification	STPSC10065GY-TR	STPSC10065 Series

Capacitance @ Vr, F	670 pF	670 pF
Current - Average Rectified (Io)	10 A	10 A
Current - Reverse Leakage @ Vr	130 µA	130 µA
Grade	Automotive	Automotive
Mounting Type	Surface Mount	Surface Mount, Through Hole
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-40 °C	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3, TO-220-2
Qualification	AEC-Q101	AEC-Q101
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	D2PAK	D2PAK, TO-220AC
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	650 V
Voltage - Forward (Vf) (Max) @ If	1.45 V	1.45 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Technology	Grade	Qualification
STMicroelectronics STPSC10065G2-TR	1.45 V	650 V	Surface Mount	No Recovery Time	D2PAK	-40 °C	175 ░C	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	670 pF	130 µA	10 A	SiC (Silicon Carbide) Schottky
STMicroelectronics STPSC10065DY	1.45 V	650 V	Through Hole	No Recovery Time	TO-220AC	-40 °C	175 ░C	TO-220-2	670 pF	130 µA	10 A	SiC (Silicon Carbide) Schottky	Automotive	AEC-Q101
STMicroelectronics STPSC10065GY-TR	1.45 V	650 V	Surface Mount	No Recovery Time	D2PAK	-40 °C	175 ░C	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	670 pF	130 µA	10 A	SiC (Silicon Carbide) Schottky	Automotive	AEC-Q101

STPSC10065GY-TR

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STPSC10065GY-TR

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Pricing

Description

STPSC10065 Series

Documents

Datasheet

AN4242

DS12186

AN5088

Product Change Notice EN

Datasheet

Technical Specifications

STPSC10065 Series