STPSC10065 Series

650 V power Schottky silicon carbide diode

Catalog

650 V power Schottky silicon carbide diode

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Technology	Grade	Qualification
STMicroelectronics STPSC10065G2-TR	1.45 V	650 V	Surface Mount	No Recovery Time	D2PAK	-40 °C	175 ░C	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	670 pF	130 µA	10 A	SiC (Silicon Carbide) Schottky
STMicroelectronics STPSC10065DY	1.45 V	650 V	Through Hole	No Recovery Time	TO-220AC	-40 °C	175 ░C	TO-220-2	670 pF	130 µA	10 A	SiC (Silicon Carbide) Schottky	Automotive	AEC-Q101
STMicroelectronics STPSC10065GY-TR	1.45 V	650 V	Surface Mount	No Recovery Time	D2PAK	-40 °C	175 ░C	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	670 pF	130 µA	10 A	SiC (Silicon Carbide) Schottky	Automotive	AEC-Q101

Catalog

650 V power Schottky silicon carbide diode

Description

This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.